FDG6318P fet equivalent, dual p-channel/ digital fet.
*
–0.5 A,
–20 V. RDS(ON) = 780 mΩ @ VGS =
–4.5 V RDS(ON) = 1200 mΩ @ VGS =
–2.5 V
* Very low leve.
as a replacement for bipolar digital transistors and small signal MOSFETS.
Features
*
–0.5 A,
&.
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low vol.
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